Chemical deposition method for metal chalcogenide thin films
Identifieur interne : 000D18 ( Main/Exploration ); précédent : 000D17; suivant : 000D19Chemical deposition method for metal chalcogenide thin films
Auteurs : R. S. Mane [Inde] ; C. D. Lokhande [Inde]Source :
- Materials Chemistry and Physics [ 0254-0584 ] ; 2000.
English descriptors
Abstract
Metal chalcogenide thin films preparation by chemical methods are currently attracting considerable attention as it is relatively inexpensive, simple and convenient for large area deposition. A variety of substrates such as insulators, semiconductors or metals can be used since these are low temperature processes which avoid oxidation and corrosion of substrate. These are slow processes which facilitates better orientation of crystallites with improved grain structure. Depending upon deposition conditions, film growth can take place by ion-by-ion condensation of the materials on the substrates or by adsorption of colloidal particles from the solution on the substrate. Using these methods, thin films of group II–VI, V–VI, III–VI etc. have been deposited. Solar selective coatings, solar control, photoconductors, solid state and photoelectrochemical solar cells, optical imaging, hologram recording, optical mass memories etc. are some of the applications of metal chalcogenide films. In the present review article, we have described in detail, chemical bath deposition method of metal chalcogenide thin films, it is capable of yielding good quality thin films. Their preparative parameters, structural, optical, electrical properties etc. are described. Theoretical background necessary for the chemical deposition of thin films is also discussed.
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DOI: 10.1016/S0254-0584(00)00217-0
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